VMFS5C410NLAFT1G
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NVMFS5C410NLAFT1G , ON Semiconductor

Manufacturer: ON Semiconductor
Mfr.Part #: NVMFS5C410NLAFT1G
Package:
RoHS:
Datasheet:

PDF For NVMFS5C410NLAFT1G

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Description:
MOSFET T6 40V HEFET
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Specifications
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category MOSFET
RoHS
Forward Transconductance - Min 190 S
Rds On - Drain-Source Resistance 650 uOhms
Rise Time 130 ns
Fall Time 177 ns
Pd - Power Dissipation 167 W, 3.8 W
Product Type MOSFET
Number Of Channels 1 Channel
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Channel Mode Enhancement
Qualification AEC-Q101
Packaging Cut Tape or Reel
Brand ON Semiconductor
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 10 V
Vgs Th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 143 nC
Technology Si
Id - Continuous Drain Current 330 A
Vds - Drain-Source Breakdown Voltage 40 V
Typical Turn-Off Delay Time 66 ns
Typical Turn-On Delay Time 20 ns
Factory Pack Quantity 1500
Subcategory MOSFETs
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