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2DB1132R-13
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2DB1132R-13 , Diodes Incorporated

Manufacturer: Diodes Incorporated
Mfr.Part #: 2DB1132R-13
Package: SOT-89-3
RoHS:
Datasheet:

PDF For 2DB1132R-13

ECAD:
Description:
Bipolar Transistors - BJT 1000W -32Vceo
Tips: the prices and stock are available, please place order directly.
  • Quantity Unit Price
  • 5+ $0.16704
  • 50+ $0.14922
  • 150+ $0.14157
  • 500+ $0.13203
  • 2500+ $0.11097
  • 5000+ $0.10836

In Stock: 2145

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$0.8352

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Specifications
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current - 1 A
Mounting Style SMD/SMT
Pd - Power Dissipation 1000 mW
Product Type BJTs - Bipolar Transistors
Package / Case SOT-89-3
Collector- Base Voltage VCBO - 40 V
Collector- Emitter Voltage VCEO Max - 32 V
Collector-Emitter Saturation Voltage - 125 mV
Emitter- Base Voltage VEBO - 5 V
Length 4.5 mm
Width 2.48 mm
Height 1.5 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Gain Bandwidth Product FT 190 MHz
Series 2DB11
Packaging Cut Tape or Reel
Brand Diodes Incorporated
Configuration Single
DC Collector/Base Gain Hfe Min 180 at - 100 mA, - 3 V
Transistor Polarity PNP
Factory Pack Quantity 2500
Subcategory Transistors
Unit Weight 0.001834 oz
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$
5 0.16704
50 0.14922
150 0.14157
500 0.13203
2500 0.11097
5000 0.10836