PB80N04S304ATMA1
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PB80N04S304ATMA1 , Infineon Technologies

Manufacturer: Infineon Technologies
Mfr.Part #: IPB80N04S304ATMA1
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MOSFET N-CH 40V 80A TO263-3
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Specifications
Product Attribute Attribute Value
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Rds On (Max) @ Id, Vgs 3.8mOhm @ 80A, 10V
Vgs(Th) (Max) @ Id 4V @ 90µA
Input Capacitance (Ciss) (Max) @ Vds 5200 pF @ 25 V
Supplier Device Package PG-TO263-3-2
Technology MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss) 40 V
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Fet Type N-Channel
Vgs (Max) ±20V
Fet Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds On) 10V
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