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PD25CN10NGBUMA1
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PD25CN10NGBUMA1 , Infineon Technologies

Manufacturer: Infineon Technologies
Mfr.Part #: IPD25CN10NGBUMA1
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MOSFET N-CH 100V 35A TO252-3
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Specifications
Product Attribute Attribute Value
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Drain To Source Voltage (Vdss) 100 V
Rds On (Max) @ Id, Vgs 25mOhm @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2070 pF @ 50 V
Power Dissipation (Max) 71W (Tc)
Fet Type N-Channel
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Fet Feature -
Vgs(Th) (Max) @ Id 4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Operating Temperature -55°C ~ 175°C (TJ)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
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