Notice: Due to the Labour Day, Orders placed during 1st ~ 5th May will be shipped after the holidays. View More
HGTG11N120CND
Payment:
Delivery:

HGTG11N120CND , ON Semiconductor / Fairchild

Manufacturer: ON Semiconductor / Fairchild
Mfr.Part #: HGTG11N120CND
Package: TO-247-3
RoHS:
Datasheet:

PDF For HGTG11N120CND

ECAD:
Description:
IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
Tips: the prices and stock are available, please place order directly.
  • Quantity Unit Price
  • 1+ $3.32424
  • 10+ $2.87451
  • 30+ $2.60730
  • 90+ $2.33613
  • 450+ $2.21121
  • 900+ $2.15622

In Stock: 4496

Ship Immediately
Quantity Minimum 1
BUY
Total

$3.32424

  • Product Details
  • Shopping Guide
  • FAQs
Specifications
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category IGBT Transistors
RoHS
Maximum Gate Emitter Voltage 20 V
Mounting Style Through Hole
Pd - Power Dissipation 298 W
Product Type IGBT Transistors
Package / Case TO-247-3
Collector- Emitter Voltage VCEO Max 1200 V
Collector-Emitter Saturation Voltage 2.1 V
Length 15.87 mm
Width 4.82 mm
Height 20.82 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series HGTG11N120CND
Packaging Tube
Part # Aliases HGTG11N120CND_NL
Brand ON Semiconductor / Fairchild
Configuration Single
Continuous Collector Current 55 A
Continuous Collector Current At 25 C 43 A
Continuous Collector Current Ic Max 43 A
Gate-Emitter Leakage Current +/- 250 nA
Technology Si
Factory Pack Quantity 450
Subcategory IGBTs
Unit Weight 0.225401 oz
Related Products
797981
1156
/category/Semiconductors/Discrete-Semiconductors/Transistors/IGBT-Transistors_1156?proid=797981&N=
$
1 3.32424
10 2.87451
30 2.60730
90 2.33613
450 2.21121
900 2.15622