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2SB1122S-TD-E
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2SB1122S-TD-E , ON Semiconductor

Manufacturer: ON Semiconductor
Mfr.Part #: 2SB1122S-TD-E
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RoHS:
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PDF For 2SB1122S-TD-E

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Description:
Bipolar Transistors - BJT BIP PNP 1A 50V
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Specifications
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current - 2 A
Mounting Style SMD/SMT
Pd - Power Dissipation 1.3 W
Product Type BJTs - Bipolar Transistors
Collector- Base Voltage VCBO - 60 V
Collector- Emitter Voltage VCEO Max 50 V
Collector-Emitter Saturation Voltage - 0.18 V
Emitter- Base Voltage VEBO - 5 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Gain Bandwidth Product FT 150 MHz
Series 2SB1122
Packaging Cut Tape or Reel
Brand ON Semiconductor
Configuration Single
Continuous Collector Current - 1 A
DC Collector/Base Gain Hfe Min 140
DC Current Gain HFE Max 560
Transistor Polarity PNP
Factory Pack Quantity 1000
Subcategory Transistors
Unit Weight 0.001806 oz
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