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MJD44H11-1G
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MJD44H11-1G , ON Semiconductor

Manufacturer: ON Semiconductor
Mfr.Part #: MJD44H11-1G
Package: DPAK-3
RoHS:
Datasheet:

PDF For MJD44H11-1G

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Description:
Bipolar Transistors - BJT 8A 80V 20W NPN
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Specifications
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current 8 A
Mounting Style Through Hole
Pd - Power Dissipation 20 W
Product Type BJTs - Bipolar Transistors
Package / Case DPAK-3
Collector- Base Voltage VCBO 5 V
Collector- Emitter Voltage VCEO Max 80 V
Collector-Emitter Saturation Voltage 1 V
Emitter- Base Voltage VEBO 5 V
Length 6.73 mm
Width 2.38 mm
Height 6.35 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Gain Bandwidth Product FT 85 MHz
Series MJD44H11
Packaging Tube
Brand ON Semiconductor
Configuration Single
Continuous Collector Current 8 A
DC Collector/Base Gain Hfe Min 60
Transistor Polarity NPN
Factory Pack Quantity 75
Subcategory Transistors
Unit Weight 0.012346 oz
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1 0.38917