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GW30H60DFB
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GW30H60DFB , STMicroelectronics

Manufacturer: STMicroelectronics
Mfr.Part #: STGW30H60DFB
Package: TO-247-3
RoHS:
Datasheet:

PDF For STGW30H60DFB

ECAD:
Description:
IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
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  • Quantity Unit Price
  • 1+ $3.54996
  • 10+ $3.09888
  • 30+ $2.82924
  • 100+ $2.55825
  • 500+ $2.43333
  • 1000+ $2.37672

In Stock: 169

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$3.54996

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Specifications
Product Attribute Attribute Value
Manufacturer STMicroelectronics
Product Category IGBT Transistors
RoHS
Maximum Gate Emitter Voltage 20 V
Mounting Style Through Hole
Pd - Power Dissipation 260 W
Product Type IGBT Transistors
Package / Case TO-247-3
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.55 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Series STGW30H60DFB
Packaging Tube
Brand STMicroelectronics
Configuration Single
Continuous Collector Current At 25 C 60 A
Continuous Collector Current Ic Max 30 A
Gate-Emitter Leakage Current 250 nA
Technology Si
Factory Pack Quantity 600
Subcategory IGBTs
Unit Weight 1.340411 oz
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$
1 3.54996
10 3.09888
30 2.82924
100 2.55825
500 2.43333
1000 2.37672