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I9410BDY-T1-GE3
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I9410BDY-T1-GE3 , Vishay / Siliconix

Manufacturer: Vishay / Siliconix
Mfr.Part #: SI9410BDY-T1-GE3
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PDF For SI9410BDY-T1-GE3

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MOSFET N-CH 30V 6.2A 8SO
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Specifications
Product Attribute Attribute Value
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Drain To Source Voltage (Vdss) 30 V
Rds On (Max) @ Id, Vgs 24mOhm @ 8.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds -
Power Dissipation (Max) 1.5W (Ta)
Fet Type N-Channel
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Fet Feature -
Vgs(Th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25°C 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
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