Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | - 3 A |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 10 W |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | TO-252-3 |
| Collector- Base Voltage VCBO | - 40 V |
| Collector- Emitter Voltage VCEO Max | - 32 V |
| Collector-Emitter Saturation Voltage | - 0.8 V |
| Emitter- Base Voltage VEBO | - 5 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Qualification | AEC-Q101 |
| Gain Bandwidth Product FT | 110 MHz |
| Series | 2DB11 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Single |
| DC Collector/Base Gain Hfe Min | 120 |
| DC Current Gain HFE Max | 270 at - 500 mA, - 3 V |
| Transistor Polarity | PNP |
| Factory Pack Quantity | 2500 |
| Subcategory | Transistors |
| Unit Weight | 0.139332 oz |
