Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | - 200 mA |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 250 mW |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | DFN1006H4-3 |
| Collector- Base Voltage VCBO | - 50 V |
| Collector- Emitter Voltage VCEO Max | - 45 V |
| Collector-Emitter Saturation Voltage | - 650 mV |
| Emitter- Base Voltage VEBO | - 5 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product FT | 100 MHz |
| Series | BC857B |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Single |
| Continuous Collector Current | - 100 mA |
| DC Collector/Base Gain Hfe Min | 220 at -2 mA, - 5 V |
| Transistor Polarity | PNP |
| Factory Pack Quantity | 10000 |
| Subcategory | Transistors |
