Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | MOSFET |
| RoHS |
|
| Type | Enhancement Mode Field Effect Transistor |
| Product | MOSFET Small Signal |
| Forward Transconductance - Min | 0.08 S, 0.05 S |
| Rds On - Drain-Source Resistance | 7.5 Ohms, 10 Ohms |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 200 mW |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | SOT-363-6 |
| Length | 2.2 mm |
| Width | 1.35 mm |
| Height | 1 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | BSS84 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Dual |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Vgs - Gate-Source Voltage | 5 V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V, 800 mV |
| Technology | Si |
| Id - Continuous Drain Current | 115 mA, 130 mA |
| Vds - Drain-Source Breakdown Voltage | 60 V, 50 V |
| Typical Turn-Off Delay Time | 11 ns, 18 ns |
| Typical Turn-On Delay Time | 7 ns, 10 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000212 oz |
