| IMAGE | PART NO | PRICE | QTY | STOCK | MANUFACTURER | PACKAGE | PACKAGING | PRODUCT CATEGORY | Brand | Channel Mode | Channel Type | Collector-Emitter Breakdown Voltage | Compliance | Configuration | Continuous Drain Current (Id) @ 25°C | Current - Continuous Drain (Id) @ 25°C | Current - Peak Output (Source, Sink) | Development Kit | Drain current | Drain-source breakdown voltage | Driven Configuration | Factory Pack Quantity | Fall Time | Features | FET configuration | FET类型 | Forward Transconductance - Min | Gate Type | Height | High Side Voltage - Max (Bootstrap) | Id - Continuous Drain Current | Input Type | Length | Logic Voltage - VIL, VIH | Manufacturer | Maximum DC Collector Current | Maximum Operating Temperature | Minimum Operating Temperature | Moisture Sensitive | Mounting Style | Number of Channels | Number of Drivers | On Resistance - Max | Operating Supply Voltage | Package | Package / Case | Packaging | Part # Aliases | Pd - Power Dissipation | Power Dissipation-Max (Ta=25°C) | Product | Product Category | Product Type | Qg - Gate Charge | Qualification | Rds On - Drain-Source Resistance | Rise Time | RoHS | search for | Series | Shipping Restrictions | Subcategory | Technology | Termination Style | Tradename | Transistor Polarity | Transistor Type | Type | Type of installation | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Unit Weight | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Width | 功率(Max) | 导通电阻Rds On(Max) | 工作温度(Tj) | 栅极电荷(Qg)(Max) | 漏极电流Id(连续)(Max) | 漏源电压(Vdss) | 输入电容(Ciss)(Max) | 连续漏极电流Id@25℃ | |
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DMC2053UVT-7
MOSFET MOSFET BVDSS: 8V-24V
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5+ $0.11862 50+ $0.09432 150+ $0.08388 500+ $0.07092 3000+ $0.06507 6000+ $0.06165 |
BUY
|
1805
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Diodes Incorporated | TSOT-26-6 | MOSFET | Cut Tape or Reel | Diodes Incorporated | Enhancement | Dual | 3000 | 3.6 ns, 18 ns | 4.6 A, 3.2 A | Diodes Incorporated | + 150 C | - 55 C | SMD/SMT | 2 Channel | TSOT-26-6 | Cut Tape or Reel | 1.1 W | MOSFET | MOSFET | 3.6 nC, 5.9 nC | 35 mOhms, 74 mOhms | 3 ns, 7.8 ns | Y | MOSFETs | Si | N-Channel, P-Channel | 1 N-Channel, 1 P-Channel | 12.5 ns, 31 ns | 2.6 ns, 3.2 ns | 20 V | 12 V | 400 mV, 1 V | ||||||||||||||||||||||||||||||||||||||||||||||||
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SIJ188DP-T1-GE3
MOSFET 60V Vds; 20V Vgs PowerPAK SO-8L
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1+ $0.96498 10+ $0.94005 30+ $0.92430 100+ $0.90855 |
BUY
|
27
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Vishay / Siliconix | PowerPAK SO-8 | MOSFET | Cut Tape or Reel | Vishay / Siliconix | Enhancement | Single | 3000 | 6 ns | 41 S | 92.4 A | Vishay | + 150 C | - 55 C | SMD/SMT | 1 Channel | PowerPAK SO-8 | Cut Tape or Reel | 65.7 W | MOSFET | MOSFET | 44 nC | 3.85 mOhms | 6 ns | Y | SIJ | MOSFETs | Si | TrenchFET, PowerPAK | N-Channel | 1 N-Channel | 22 ns | 13 ns | 60 V | 20 V | 2 V | |||||||||||||||||||||||||||||||||||||||||||||
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BSC059N04LS6ATMA1
MOSFET
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350742
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Infineon Technologies | TDSON-8 | MOSFET | Cut Tape or Reel | Infineon Technologies | Enhancement | Single | 5000 | 2 ns | 100 S | 59 A | Infineon | + 175 C | - 55 C | SMD/SMT | 1 Channel | TDSON-8 | Cut Tape or Reel | 38 W | MOSFET | MOSFET | 9.4 nC | 5.9 mOhms | 1.2 ns | Y | MOSFETs | Si | N-Channel | 1 N-Channel | 8 ns | 3 ns | 40 V | 20 V | 1.3 V | |||||||||||||||||||||||||||||||||||||||||||||||||
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SISH116DN-T1-GE3
MOSFET 40V Vds 20V Vgs PowerPAK 1212-8
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584406
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Vishay / Siliconix | PowerPAK-1212-8SH | MOSFET | Cut Tape or Reel | Vishay / Siliconix | Enhancement | Single | 3000 | 10 ns | 68 S | 16.4 A | Vishay | + 150 C | - 55 C | SMD/SMT | 1 Channel | PowerPAK-1212-8SH | Cut Tape or Reel | 3.8 W | MOSFET | MOSFET | 23 nC | 7.8 mOhms | 10 ns | Y | SIS | MOSFETs | Si | TrenchFET, PowerPAK | N-Channel | 1 N-Channel TrenchFET Power MOSFET | 36 ns | 10 ns | 40 V | 20 V | 1.5 V | |||||||||||||||||||||||||||||||||||||||||||||||
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IPAN60R600P7SXKSA1
MOSFET
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1+ $0.56150 |
BUY
|
500
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Infineon Technologies | - | MOSFET | Tube | Infineon Technologies | 500 | Infineon | Tube | SP001866160 | MOSFET | MOSFET | Y | MOSFETs | Si | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SIHFR320-GE3
MOSFET 400V Vds 20V Vgs DPAK (TO-252)
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468558
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Vishay / Siliconix | TO-252-3 | MOSFET | - | Vishay / Siliconix | Enhancement | Single | 1 | 13 ns | 1.7 S | 3.1 A | Vishay | + 150 C | - 55 C | SMD/SMT | 1 Channel | TO-252-3 | 42 W | MOSFET | MOSFET | 20 nC | 1.8 Ohms | 14 ns | Y | SIH | MOSFETs | Si | N-Channel | 1 N-Channel | 30 ns | 10 ns | 400 V | 20 V | 2 V | |||||||||||||||||||||||||||||||||||||||||||||||||
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SIA923EDJ-T4-GE3
MOSFET -20V Vds 8V Vgs PowerPAK SC-70
|
741634
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Vishay / Siliconix | PowerPAK-SC70-6 | MOSFET | Cut Tape or Reel | Vishay / Siliconix | Enhancement | Dual | 3000 | 10 ns | 11 S | 0.75 mm | 4.5 A | 2.05 mm | Vishay | + 150 C | - 55 C | SMD/SMT | 2 Channel | PowerPAK-SC70-6 | Cut Tape or Reel | 7.8 W | MOSFET | MOSFET | 25 nC | 54 mOhms | 12 ns | Y | SIA | MOSFETs | Si | TrenchFET | P-Channel | 2 P-Channel | 26 ns | 7 ns | 20 V | 8 V | 500 mV | 2.05 mm | ||||||||||||||||||||||||||||||||||||||||||||
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SIHFL9110TR-GE3
MOSFET 100V Vds 20V Vgs SOT-223
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866711
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Vishay / Siliconix | SOT-223-3 | MOSFET | - | Vishay / Siliconix | Enhancement | Single | 1 | 17 ns | 0.82 S | 1.1 A | Vishay | + 150 C | - 55 C | SMD/SMT | 1 Channel | SOT-223-3 | 3.1 W | MOSFET | MOSFET | 8.7 nC | 1.2 Ohms | 27 ns | Y | SIH | MOSFETs | Si | P-Channel | 1 P-Channel | 15 ns | 10 ns | 0.009171 oz | 100 V | 20 V | - 4 V | ||||||||||||||||||||||||||||||||||||||||||||||||
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BUK6D22-30EX
MOSFET BUK6D22-30E/SOT1220/SOT1220
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1+ $0.29817 10+ $0.24039 30+ $0.21627 100+ $0.18540 500+ $0.17190 1000+ $0.16389 |
BUY
|
100
|
Nexperia | DFN2020-6 | MOSFET | Cut Tape or Reel | Nexperia | Enhancement | Single | 3000 | 7 ns | 22 A | Nexperia | + 175 C | - 55 C | SMD/SMT | 1 Channel | DFN2020-6 | Cut Tape or Reel | 934660947115 | 19 W | MOSFET | MOSFET | 9.5 nC | AEC-Q101 | 22 mOhms | 18 ns | Y | MOSFETs | Si | N-Channel | 1 N-Channel | 15 ns | 4 ns | 30 V | 20 V | 1 V | ||||||||||||||||||||||||||||||||||||||||||||||
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BUK6D77-60EX
MOSFET BUK6D77-60E/SOT1220/SOT1220
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5+ $0.17226 50+ $0.15057 150+ $0.14130 500+ $0.12969 3000+ $0.12456 6000+ $0.12141 |
BUY
|
1570
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Nexperia | DFN2020MD-6 | MOSFET | Cut Tape or Reel | Nexperia | Enhancement | Single | 3000 | 4.5 ns | 10.6 A | Nexperia | + 175 C | - 55 C | SMD/SMT | 1 Channel | DFN2020MD-6 | Cut Tape or Reel | 934661067115 | 18.8 W | MOSFET | MOSFET | 9.2 nC | AEC-Q101 | 77 mOhms | 3.5 ns | Y | MOSFETs | Si | N-Channel | 1 N-Channel | 10.5 ns | 4 ns | 60 V | 20 V | 1.3 V |
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