Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 990 mOhms, 1.9 Ohms |
| Rise Time | 3.3 ns, 5.7 ns |
| Fall Time | 6.4 ns, 16.4 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 350 mW |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | SOT-963-6 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | DMC2990 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Dual |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Vgs - Gate-Source Voltage | 4.5 V |
| Vgs Th - Gate-Source Threshold Voltage | 400 mV |
| Qg - Gate Charge | 0.5 nC, 0.4 nC |
| Technology | Si |
| Id - Continuous Drain Current | 450 mA, 310 mA |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 19 ns, 31.1 ns |
| Typical Turn-On Delay Time | 4 ns, 5.8 ns |
| Factory Pack Quantity | 10000 |
| Subcategory | MOSFETs |
