Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | MOSFET |
| RoHS |
|
| Type | MOSFET |
| Rds On - Drain-Source Resistance | 180 mOhms |
| Rise Time | 3.5 ns |
| Fall Time | 4.6 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 2.1 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | SO-8 |
| Length | 5 mm |
| Width | 4 mm |
| Height | 1.5 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | ZXMN6A111 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Dual |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Technology | Si |
| Id - Continuous Drain Current | 3.2 A |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Typical Turn-Off Delay Time | 8.2 ns |
| Typical Turn-On Delay Time | 1.95 ns |
| Factory Pack Quantity | 500 |
| Subcategory | MOSFETs |
| Unit Weight | 0.002610 oz |
