Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | IXYS |
| Product Category | IGBT Transistors |
| RoHS |
|
| Maximum Gate Emitter Voltage | 20 V |
| Operating Temperature Range | - 55 C to + 150 C |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 190 W |
| Product Type | IGBT Transistors |
| Package / Case | TO-247AD-3 |
| Collector- Emitter Voltage VCEO Max | 1.7 kV |
| Collector-Emitter Saturation Voltage | 2.7 V |
| Length | 16.26 mm |
| Width | 5.3 mm |
| Height | 21.46 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Series | IXGH16N170 |
| Packaging | Tube |
| Brand | IXYS |
| Configuration | Single |
| Continuous Collector Current | 32 A |
| Continuous Collector Current At 25 C | 32 A |
| Continuous Collector Current Ic Max | 80 A |
| Gate-Emitter Leakage Current | 100 nA |
| Technology | Si |
| Factory Pack Quantity | 30 |
| Subcategory | IGBTs |
| Unit Weight | 0.229281 oz |
