Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 1000 mA |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 500 mW |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | SOT-23-3 |
| Collector- Base Voltage VCBO | 50 V |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Collector-Emitter Saturation Voltage | 0.7 V |
| Emitter- Base Voltage VEBO | 5 V |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product FT | 170 MHz |
| Series | BC817 |
| Packaging | Cut Tape or Reel |
| Part # Aliases | 817K-25 BC BC817K25E6327XT E6327 SP000271875 |
| Brand | Infineon Technologies |
| Configuration | Single |
| Continuous Collector Current | 500 mA |
| DC Collector/Base Gain Hfe Min | 160 at 100 mA, 1 V |
| DC Current Gain HFE Max | 400 at 100 mA, 1 V |
| Transistor Polarity | NPN |
| Technology | Si |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |
| Unit Weight | 0.000282 oz |
