Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | IGBT Transistors |
| RoHS |
|
| Maximum Gate Emitter Voltage | 20 V |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 333 W |
| Product Type | IGBT Transistors |
| Package / Case | TO-247-3 |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Saturation Voltage | 1.85 V |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 175 C |
| Series | HighSpeed 3 |
| Packaging | Tube |
| Part # Aliases | IGW50N60H3FKSA1 IGW5N6H3XK SP000702548 |
| Brand | Infineon Technologies |
| Configuration | Single |
| Continuous Collector Current At 25 C | 100 A |
| Continuous Collector Current Ic Max | 100 A |
| Gate-Emitter Leakage Current | 100 nA |
| Technology | Si |
| Factory Pack Quantity | 240 |
| Subcategory | IGBTs |
| Unit Weight | 1.340411 oz |
| Tradename | TRENCHSTOP |
