Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | IGBT Transistors |
| RoHS |
|
| Maximum Gate Emitter Voltage | 20 V |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 100 W |
| Product Type | IGBT Transistors |
| Package / Case | TO-252-3 |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Saturation Voltage | 2.2 V |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Height | 2.41 mm |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 175 C |
| Series | RC |
| Packaging | Cut Tape or Reel |
| Part # Aliases | IKD06N60RFATMA1 IKD6N6RFXT SP000939364 |
| Brand | Infineon Technologies |
| Configuration | Single |
| Continuous Collector Current At 25 C | 12 A |
| Gate-Emitter Leakage Current | 100 nA |
| Technology | Si |
| Factory Pack Quantity | 2500 |
| Subcategory | IGBTs |
| Unit Weight | 0.011743 oz |
| Tradename | TRENCHSTOP |
