Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | IGBT Transistors |
| RoHS |
|
| Maximum Gate Emitter Voltage | 20 V |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 349 W |
| Product Type | IGBT Transistors |
| Package / Case | TO-247-3 |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Collector-Emitter Saturation Voltage | 1.7 V |
| Length | 15.9 mm |
| Width | 5.3 mm |
| Height | 20.95 mm |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 175 C |
| Series | TRENCHSTOP IGBT |
| Packaging | Tube |
| Part # Aliases | IKW25N120T2FKSA1 IKW25N12T2XK SP000244960 |
| Brand | Infineon Technologies |
| Configuration | Single |
| Continuous Collector Current At 25 C | 50 A |
| Gate-Emitter Leakage Current | 200 nA |
| Technology | Si |
| Factory Pack Quantity | 240 |
| Subcategory | IGBTs |
| Unit Weight | 1.340411 oz |
| Tradename | TRENCHSTOP |
