Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Nexperia |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 200 mA |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 250 mW |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | DFN-1006B-3 |
| Collector- Base Voltage VCBO | 50 V |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Collector-Emitter Saturation Voltage | 90 mV |
| Emitter- Base Voltage VEBO | 6 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Qualification | AEC-Q101 |
| Gain Bandwidth Product FT | 100 MHz |
| Packaging | Cut Tape or Reel |
| Brand | Nexperia |
| Configuration | Single |
| Continuous Collector Current | 100 mA |
| DC Collector/Base Gain Hfe Min | 420 |
| DC Current Gain HFE Max | 800 |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 10000 |
| Subcategory | Transistors |
| Unit Weight | 0.000024 oz |
