Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Nexperia |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | - 100 mA |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 350 mW |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | DFN-1010B-6 |
| Collector- Base Voltage VCBO | - 50 V |
| Collector- Emitter Voltage VCEO Max | - 45 V |
| Collector-Emitter Saturation Voltage | - 6 V |
| Emitter- Base Voltage VEBO | - 6 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Qualification | AEC-Q101 |
| Gain Bandwidth Product FT | 175 MHz |
| Packaging | Cut Tape or Reel |
| Brand | Nexperia |
| Configuration | Dual |
| Continuous Collector Current | - 100 mA |
| DC Collector/Base Gain Hfe Min | 200 |
| DC Current Gain HFE Max | 450 |
| Transistor Polarity | PNP |
| Factory Pack Quantity | 5000 |
| Subcategory | Transistors |
