Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Nexperia |
| Product Category | Bipolar Transistors - Pre-Biased |
| RoHS |
|
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 200 mW |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Number Of Channels | 2 Channel |
| Package / Case | TSSOP-6 |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Emitter- Base Voltage VEBO | 10 V |
| Length | 2.2 mm |
| Width | 1.35 mm |
| Height | 1 mm |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C |
| Qualification | AEC-Q101 |
| Packaging | Cut Tape or Reel |
| Part # Aliases | PUMD12 T/R |
| Brand | Nexperia |
| Configuration | Dual |
| Continuous Collector Current | 100 mA |
| DC Collector/Base Gain Hfe Min | 80 |
| DC Current Gain HFE Max | 80 |
| Peak DC Collector Current | 100 mA |
| Transistor Polarity | NPN, PNP |
| Typical Input Resistor | 47 kOhms |
| Typical Resistor Ratio | 1 |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |
| Unit Weight | 0.035274 oz |
