Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 1.5 A |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 12.5 W |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | TO-126-3 |
| Collector- Base Voltage VCBO | 80 V |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Collector-Emitter Saturation Voltage | 0.5 V |
| Emitter- Base Voltage VEBO | 5 V |
| Length | 8 mm |
| Width | 3.25 mm |
| Height | 1.5 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Series | BD139 |
| Packaging | Bulk |
| Part # Aliases | BD13916S_NL |
| Brand | ON Semiconductor / Fairchild |
| Configuration | Single |
| Continuous Collector Current | 1.5 A |
| DC Collector/Base Gain Hfe Min | 40 |
| DC Current Gain HFE Max | 160 |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 2000 |
| Subcategory | Transistors |
| Unit Weight | 0.026843 oz |
