Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 5 A |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 40000 mW |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | TO-220-3 |
| Collector- Base Voltage VCBO | 1 kV |
| Collector- Emitter Voltage VCEO Max | 450 V |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Emitter- Base Voltage VEBO | 9 V |
| Length | 10.16 mm |
| Width | 4.7 mm |
| Height | 9.19 mm |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C |
| Series | BUT11AF |
| Packaging | Tube |
| Brand | ON Semiconductor / Fairchild |
| Configuration | Single |
| Continuous Collector Current | 5 A |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 1000 |
| Subcategory | Transistors |
| Unit Weight | 0.080072 oz |
