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MBT3906DW1T1G
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MBT3906DW1T1G , ON Semiconductor

Manufacturer: ON Semiconductor
Mfr.Part #: MBT3906DW1T1G
Package: SOT-363-6
RoHS:
Datasheet:

PDF For MBT3906DW1T1G

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Description:
Bipolar Transistors - BJT SS GP XSTR PNP 40V
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  • Quantity Unit Price
  • 5+ $0.04833
  • 50+ $0.03663
  • 150+ $0.03078
  • 500+ $0.02637
  • 3000+ $0.02286
  • 6000+ $0.02106

In Stock: 11170

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$0.24165

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Specifications
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current 0.2 A
Mounting Style SMD/SMT
Pd - Power Dissipation 150 mW
Product Type BJTs - Bipolar Transistors
Package / Case SOT-363-6
Collector- Base Voltage VCBO - 40 V
Collector- Emitter Voltage VCEO Max - 40 V
Collector-Emitter Saturation Voltage - 0.4 V
Emitter- Base Voltage VEBO 5 V
Length 2.2 mm
Width 1.35 mm
Height 1 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Gain Bandwidth Product FT 250 MHz
Series MBT3906DW1
Packaging Cut Tape or Reel
Part # Aliases MBT3906DW1T2G
Brand ON Semiconductor
Configuration Dual
Continuous Collector Current - 200 mAdc
DC Collector/Base Gain Hfe Min 60
Transistor Polarity PNP
Factory Pack Quantity 3000
Subcategory Transistors
Unit Weight 0.000212 oz
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$
5 0.04833
50 0.03663
150 0.03078
500 0.02637
3000 0.02286
6000 0.02106