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MJD3055T4G
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MJD3055T4G , ON Semiconductor

Manufacturer: ON Semiconductor
Mfr.Part #: MJD3055T4G
Package: TO-252-3
RoHS:
Datasheet:

PDF For MJD3055T4G

ECAD:
Description:
Bipolar Transistors - BJT 10A 60V 20W NPN
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  • Quantity Unit Price
  • 1+ $0.30229
  • 100+ $0.28247

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Specifications
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current 10 A
Mounting Style SMD/SMT
Pd - Power Dissipation 20 W
Product Type BJTs - Bipolar Transistors
Package / Case TO-252-3
Collector- Base Voltage VCBO 70 V
Collector- Emitter Voltage VCEO Max 60 V
Collector-Emitter Saturation Voltage 1.1 V
Emitter- Base Voltage VEBO 5 V
Length 6.73 mm
Width 6.22 mm
Height 2.38 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Gain Bandwidth Product FT 2 MHz
Series MJD3055
Packaging Cut Tape or Reel
Brand ON Semiconductor
Configuration Single
Continuous Collector Current 10 A
DC Collector/Base Gain Hfe Min 20
Transistor Polarity NPN
Factory Pack Quantity 2500
Subcategory Transistors
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$
1 0.30229
100 0.28247