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MMBT5551LT1G
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MMBT5551LT1G , ON Semiconductor

Manufacturer: ON Semiconductor
Mfr.Part #: MMBT5551LT1G
Package: SOT-23-3
RoHS:
Datasheet:

PDF For MMBT5551LT1G

ECAD:
Description:
Bipolar Transistors - BJT 600mA 160V NPN
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  • Quantity Unit Price
  • 20+ $0.02313
  • 200+ $0.01773
  • 600+ $0.01539
  • 3000+ $0.01359
  • 9000+ $0.01296
  • 21000+ $0.01242

In Stock: 8760

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Specifications
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current 0.6 A
Mounting Style SMD/SMT
Pd - Power Dissipation 225 mW
Product Type BJTs - Bipolar Transistors
Package / Case SOT-23-3
Collector- Base Voltage VCBO 140 V
Collector- Emitter Voltage VCEO Max 160 V
Collector-Emitter Saturation Voltage 0.15 V
Emitter- Base Voltage VEBO 6 V
Length 2.9 mm
Width 1.3 mm
Height 0.94 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series MMBT5551L
Packaging Cut Tape or Reel
Brand ON Semiconductor
Configuration Single
Continuous Collector Current 0.6 A
DC Collector/Base Gain Hfe Min 80
DC Current Gain HFE Max 250
Transistor Polarity NPN
Factory Pack Quantity 3000
Subcategory Transistors
Unit Weight 0.000282 oz
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$
20 0.02313
200 0.01773
600 0.01539
3000 0.01359
9000 0.01296
21000 0.01242