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BUL1102E
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BUL1102E , STMicroelectronics

Manufacturer: STMicroelectronics
Mfr.Part #: BUL1102E
Package: TO-220-3
RoHS:
Datasheet:

PDF For BUL1102E

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Description:
Bipolar Transistors - BJT High voltage fast switching NPN power transistor
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  • Quantity Unit Price
  • 1+ $1.89711
  • 10+ $1.64880
  • 30+ $1.49301
  • 100+ $1.27422
  • 500+ $1.20303
  • 1000+ $1.17216

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$1.89711

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Specifications
Product Attribute Attribute Value
Manufacturer STMicroelectronics
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current 4 A
Mounting Style Through Hole
Pd - Power Dissipation 70 W
Product Type BJTs - Bipolar Transistors
Package / Case TO-220-3
Collector- Emitter Voltage VCEO Max 450 V
Emitter- Base Voltage VEBO 12 V
Length 10.4 mm
Width 4.6 mm
Height 15.75 mm
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C
Series BUL1102E
Packaging Tube
Brand STMicroelectronics
Configuration Single
Continuous Collector Current 4 A
DC Collector/Base Gain Hfe Min 35 at 250 mA, 5 V, 12 at 2 A, 5 V
Transistor Polarity NPN
Factory Pack Quantity 1000
Subcategory Transistors
Unit Weight 0.211644 oz
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$
1 1.89711
10 1.64880
30 1.49301
100 1.27422
500 1.20303
1000 1.17216