GP10H60DF
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GP10H60DF , STMicroelectronics

Manufacturer: STMicroelectronics
Mfr.Part #: STGP10H60DF
Package: TO-220-3
RoHS:
Datasheet:

PDF For STGP10H60DF

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Description:
IGBT Transistors Trench gate H series 600V 10A HiSpd
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  • Quantity Unit Price
  • 1+ $1.70496
  • 10+ $1.48482
  • 50+ $1.34523
  • 100+ $1.20420
  • 500+ $1.13976
  • 1000+ $1.11159

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$1.70496

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Specifications
Product Attribute Attribute Value
Manufacturer STMicroelectronics
Product Category IGBT Transistors
RoHS
Maximum Gate Emitter Voltage 20 V
Mounting Style Through Hole
Pd - Power Dissipation 115 W
Product Type IGBT Transistors
Package / Case TO-220-3
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.5 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Series STGP10H60DF
Packaging Tube
Brand STMicroelectronics
Configuration Single
Continuous Collector Current At 25 C 20 A
Continuous Collector Current Ic Max 10 A
Gate-Emitter Leakage Current 250 nA
Technology Si
Factory Pack Quantity 1000
Subcategory IGBTs
Unit Weight 0.211644 oz
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$
1 1.70496
10 1.48482
50 1.34523
100 1.20420
500 1.13976
1000 1.11159