Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Product Category | IGBT Transistors |
| RoHS |
|
| Maximum Gate Emitter Voltage | 20 V |
| Operating Temperature Range | - 55 C to + 175 C |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 468 W |
| Product Type | IGBT Transistors |
| Package / Case | TO-247-3 |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Length | 20.15 mm |
| Width | 15.75 mm |
| Height | 5.15 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Series | STGWA40H120DF2 |
| Brand | STMicroelectronics |
| Configuration | Single |
| Continuous Collector Current | 40 A |
| Continuous Collector Current At 25 C | 80 A |
| Continuous Collector Current Ic Max | 80 A |
| Gate-Emitter Leakage Current | 250 nA |
| Technology | Si |
| Factory Pack Quantity | 600 |
| Subcategory | IGBTs |
| Unit Weight | 1.340411 oz |
