Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 28 mOhms |
| Rise Time | 9 ns |
| Fall Time | 4 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 2.1 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | SOIC-8 |
| Length | 4.9 mm |
| Width | 3.9 mm |
| Height | 1.75 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | CSD88539ND |
| Packaging | Cut Tape or Reel |
| Brand | Texas Instruments |
| Configuration | Dual |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 2.6 V |
| Qg - Gate Charge | 7.2 nC |
| Technology | Si |
| Id - Continuous Drain Current | 11.7 A |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Typical Turn-Off Delay Time | 14 ns |
| Typical Turn-On Delay Time | 5 ns |
| Factory Pack Quantity | 250 |
| Subcategory | MOSFETs |
| Unit Weight | 0.019048 oz |
| Tradename | NexFET |
