I2338DS-T1-BE3
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I2338DS-T1-BE3 , Vishay / Siliconix

Manufacturer: Vishay / Siliconix
Mfr.Part #: SI2338DS-T1-BE3
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PDF For SI2338DS-T1-BE3

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Description:
N-CHANNEL 30-V (D-S) MOSFET
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Specifications
Product Attribute Attribute Value
Drain To Source Voltage (Vdss) 30 V
Vgs(Th) (Max) @ Id 2.5V @ 250µA
Mounting Type Surface Mount
Fet Type N-Channel
Vgs (Max) ±20V
Rds On (Max) @ Id, Vgs 28mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Fet Feature -
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds 424 pF @ 15 V
Power Dissipation (Max) 1.3W (Ta), 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 5.5A (Ta), 6A (Tc)
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$
1 0.45648
10 0.37188
30 0.33030
100 0.28737
500 0.26316
1000 0.24975