BSS123-7-F
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BSS123-7-F , Diodes Incorporated

Manufacturer: Diodes Incorporated
Mfr.Part #: BSS123-7-F
Package: SOT-23-3
RoHS:
Datasheet:

PDF For BSS123-7-F

ECAD:
Description:
MOSFET 100V 360mW
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  • Quantity Unit Price
  • 20+ $0.01705
  • 200+ $0.01591
  • 500+ $0.01477
  • 1000+ $0.01363
  • 3000+ $0.01305
  • 6000+ $0.01226

In Stock: 8811

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$0.341

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Specifications
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category MOSFET
RoHS
Type Enhancement Mode Field Effect Transistor
Product MOSFET Small Signal
Forward Transconductance - Min 0.08 S
Rds On - Drain-Source Resistance 6 Ohms
Rise Time 8 ns
Fall Time 8 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 300 mW
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case SOT-23-3
Length 2.9 mm
Width 1.3 mm
Height 1 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series BSS123
Packaging Cut Tape or Reel
Brand Diodes Incorporated
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 20 V
Technology Si
Id - Continuous Drain Current 170 mA
Vds - Drain-Source Breakdown Voltage 100 V
Typical Turn-Off Delay Time 13 ns
Typical Turn-On Delay Time 8 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Unit Weight 0.000282 oz
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726676
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$
20 0.01705
200 0.01591
500 0.01477
1000 0.01363
3000 0.01305
6000 0.01226