Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 5.5 S, 6.5 S |
| Rds On - Drain-Source Resistance | 29 mOhms, 61 mOhms |
| Rise Time | 10.5 ns, 11.5 ns |
| Fall Time | 4.1 ns, 26.4 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 1.4 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | DFN2020-B-6 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | DMC1229 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Dual |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs - Gate-Source Voltage | 8 V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 10.5 nC, 10.7 nC |
| Technology | Si |
| Id - Continuous Drain Current | 3.8 A, 5.6 A |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Typical Turn-Off Delay Time | 16.6 ns, 27.8 ns |
| Typical Turn-On Delay Time | 5 ns, 5.7 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
