Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | MOSFET |
| Forward Transconductance - Min | 8 S, 5 S |
| Rds On - Drain-Source Resistance | 20 mOhms, 45 mOhms |
| Rise Time | 4.2 ns, 4.9 ns |
| Fall Time | 5.8 ns, 12.4 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 1.5 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | SO-8 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Dual |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V, 2 V |
| Qg - Gate Charge | 9.8 nC, 10.5 nC |
| Technology | Si |
| Id - Continuous Drain Current | 8.5 A, 5.5 A |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Typical Turn-Off Delay Time | 16.6 ns, 28.4 ns |
| Typical Turn-On Delay Time | 3.9 ns, 6.8 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000282 oz |
