Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 4 S |
| Rds On - Drain-Source Resistance | 100 mOhms, 140 mOhms |
| Rise Time | 5 ns |
| Fall Time | 3 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 840 mW |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | TSOT-26-6 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | DMG6602 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Dual |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 9 nC |
| Technology | Si |
| Id - Continuous Drain Current | 3.4 A, 2.8 A |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Typical Turn-Off Delay Time | 13 ns |
| Typical Turn-On Delay Time | 3 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
