Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 13 mOhms |
| Rise Time | 2.6 ns, 2.6 ns |
| Fall Time | 13.5 ns, 13.5 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 2.1 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | V-DFN2050-4 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | DMN2011 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Dual |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Vgs - Gate-Source Voltage | 12 V |
| Vgs Th - Gate-Source Threshold Voltage | 300 mV |
| Qg - Gate Charge | 56 nC, 56 nC |
| Technology | Si |
| Id - Continuous Drain Current | 12.2 A |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 21.6 ns, 21.6 ns |
| Typical Turn-On Delay Time | 3.6 ns, 3.6 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
