Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 8.4 mOhms |
| Rise Time | 24.5 ns |
| Fall Time | 20.8 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 660 mW |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | U-DFN2020-E-6 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | DMN2013 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 8 V |
| Vgs Th - Gate-Source Threshold Voltage | 500 mV |
| Qg - Gate Charge | 25.8 nC |
| Technology | Si |
| Id - Continuous Drain Current | 10.5 A |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 66.4 ns |
| Typical Turn-On Delay Time | 9.9 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000238 oz |
