Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 195 mOhms |
| Rise Time | 2.8 ns |
| Fall Time | 13 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 530 mW |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | X2-DFN1310-6 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | DMN23 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Dual |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Vgs - Gate-Source Voltage | 8 V |
| Vgs Th - Gate-Source Threshold Voltage | 450 mV |
| Qg - Gate Charge | 1.6 nC |
| Technology | Si |
| Id - Continuous Drain Current | 2.11 A |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 38 ns |
| Typical Turn-On Delay Time | 3.5 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000028 oz |
