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MN24H11DS-7
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MN24H11DS-7 , Diodes Incorporated

Manufacturer: Diodes Incorporated
Mfr.Part #: DMN24H11DS-7
Package: SOT-23-3
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Datasheet:

PDF For DMN24H11DS-7

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Description:
MOSFET MOSFET BVDSS: 101V-250V
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  • Quantity Unit Price
  • 5+ $0.22077
  • 50+ $0.18054
  • 150+ $0.16335
  • 500+ $0.14193
  • 3000+ $0.12663
  • 6000+ $0.12087

In Stock: 2740

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$1.10385

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Specifications
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category MOSFET
Rds On - Drain-Source Resistance 11 Ohms
Rise Time 4.7 ns
Fall Time 102.3 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 1.2 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case SOT-23-3
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Packaging Cut Tape or Reel
Brand Diodes Incorporated
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 20 V
Vgs Th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 3.7 nC
Technology Si
Id - Continuous Drain Current 270 mA
Vds - Drain-Source Breakdown Voltage 240 V
Typical Turn-Off Delay Time 17.5 ns
Typical Turn-On Delay Time 4.8 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Related Products
714668
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=714668&N=
$
5 0.22077
50 0.18054
150 0.16335
500 0.14193
3000 0.12663
6000 0.12087