Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | MOSFET |
| RoHS |
|
| Type | Enhancement Mode MOSFET |
| Product | Enhancement Mode MOSFET |
| Forward Transconductance - Min | - |
| Rds On - Drain-Source Resistance | 16 mOhms |
| Rise Time | 16.5 ns |
| Fall Time | 5.6 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 2.02 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | U-DFN2020-E-6 |
| Length | 2 mm |
| Width | 2 mm |
| Height | 0.6 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | DMN3016 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 1.4 V |
| Qg - Gate Charge | 25.1 nC |
| Technology | Si |
| Id - Continuous Drain Current | 10 A |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Typical Turn-Off Delay Time | 26.1 ns |
| Typical Turn-On Delay Time | 4.8 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
