Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | IXYS |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 42 S |
| Rds On - Drain-Source Resistance | 100 mOhms |
| Rise Time | 60 ns |
| Fall Time | 30 ns |
| Mounting Style | Chassis Mount |
| Pd - Power Dissipation | 520 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | SOT-227-4 |
| Length | 38.23 mm |
| Width | 25.42 mm |
| Height | 9.6 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | IXFN48N50 |
| Packaging | Tube |
| Brand | IXYS |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Technology | Si |
| Id - Continuous Drain Current | 48 A |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Typical Turn-Off Delay Time | 100 ns |
| Typical Turn-On Delay Time | 30 ns |
| Factory Pack Quantity | 10 |
| Subcategory | MOSFETs |
| Unit Weight | 1.058219 oz |
| Tradename | HyperFET |
