Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 19 S |
| Rds On - Drain-Source Resistance | 18 mOhms |
| Rise Time | 36 ns |
| Fall Time | 190 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 2 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | SO-8 |
| Length | 4.9 mm |
| Width | 3.9 mm |
| Height | 1.75 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Packaging | Cut Tape or Reel |
| Part # Aliases | SP001570196 |
| Brand | Infineon / IR |
| Configuration | Dual |
| Transistor Polarity | P-Channel |
| Transistor Type | 2 P-Channel |
| Vgs - Gate-Source Voltage | 12 V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 42 nC |
| Technology | Si |
| Id - Continuous Drain Current | 9 A |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 170 ns |
| Typical Turn-On Delay Time | 17 ns |
| Factory Pack Quantity | 4000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.017870 oz |
