Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS |
|
| Type | HEXFET Power MOSFET |
| Forward Transconductance - Min | 48 S |
| Rds On - Drain-Source Resistance | 5.7 mOhms |
| Rise Time | 13 ns |
| Fall Time | 5.2 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 79 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Length | 6.5 mm |
| Width | 6.22 mm |
| Height | 2.3 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Packaging | Cut Tape or Reel |
| Part # Aliases | SP001557010 |
| Brand | Infineon / IR |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 2.45 V |
| Qg - Gate Charge | 18 nC |
| Technology | Si |
| Id - Continuous Drain Current | 93 A |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 15 ns |
| Typical Turn-On Delay Time | 12 ns |
| Factory Pack Quantity | 2000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.139332 oz |
