FR9N20DTRPBF
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FR9N20DTRPBF , Infineon / IR

Manufacturer: Infineon / IR
Mfr.Part #: IRFR9N20DTRPBF
Package: TO-252-3
RoHS:
Datasheet:

PDF For IRFR9N20DTRPBF

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Description:
MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC
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Specifications
Product Attribute Attribute Value
Manufacturer Infineon
Product Category MOSFET
RoHS
Type Smps MOSFET
Rds On - Drain-Source Resistance 380 mOhms
Rise Time 16 ns
Fall Time 9.3 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 86 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TO-252-3
Length 6.5 mm
Width 6.22 mm
Height 2.3 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Channel Mode Enhancement
Packaging Cut Tape or Reel
Part # Aliases SP001552256
Brand Infineon / IR
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 30 V
Qg - Gate Charge 18 nC
Technology Si
Id - Continuous Drain Current 9.4 A
Vds - Drain-Source Breakdown Voltage 200 V
Typical Turn-Off Delay Time 13 ns
Typical Turn-On Delay Time 7.5 ns
Factory Pack Quantity 2000
Subcategory MOSFETs
Unit Weight 0.139332 oz
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1 0.40824