Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 1.3 mOhms |
| Rise Time | 200 ns |
| Fall Time | 110 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 300 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-262-3 |
| Length | 10.2 mm |
| Width | 4.5 mm |
| Height | 9.45 mm |
| Minimum Operating Temperature | - 55 C |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Packaging | Tube |
| Part # Aliases | SP001516588 |
| Brand | Infineon Technologies |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 120 nC |
| Technology | Si |
| Id - Continuous Drain Current | 382 A |
| Vds - Drain-Source Breakdown Voltage | 24 V |
| Typical Turn-Off Delay Time | 75 ns |
| Typical Turn-On Delay Time | 18 ns |
| Factory Pack Quantity | 50 |
| Subcategory | MOSFETs |
| Unit Weight | 0.084199 oz |
