Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 47 S |
| Rds On - Drain-Source Resistance | 3 mOhms |
| Rise Time | 105 ns |
| Fall Time | 33 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 125 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | PG-TDSON-8 |
| Length | 5.9 mm |
| Width | 5.15 mm |
| Height | 1.27 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Moisture Sensitive | Yes |
| Series | BSC030P03 |
| Packaging | Cut Tape or Reel |
| Part # Aliases | BSC030P03NS3 BSC3P3NS3GXT G SP000442470 |
| Brand | Infineon Technologies |
| Configuration | Single |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs Th - Gate-Source Threshold Voltage | 3.1 V |
| Qg - Gate Charge | 140 nC |
| Technology | Si |
| Id - Continuous Drain Current | 100 A |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Typical Turn-Off Delay Time | 98 ns |
| Typical Turn-On Delay Time | 27 ns |
| Factory Pack Quantity | 5000 |
| Subcategory | MOSFETs |
