Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 140 mOhms, 150 mOhms |
| Rise Time | 7.6 ns, 9.7 ns |
| Fall Time | 1.4 ns, 14 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 500 mW (1/2 W) |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | TSOP-6 |
| Length | 3 mm |
| Width | 1.5 mm |
| Height | 1.1 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Packaging | Cut Tape or Reel |
| Part # Aliases | BSL215C H6327 SP001101000 |
| Brand | Infineon Technologies |
| Configuration | Dual |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Vgs - Gate-Source Voltage | 4.5 V |
| Vgs Th - Gate-Source Threshold Voltage | 700 mV, 1.2 V |
| Qg - Gate Charge | 0.73 nC, - 3 nC |
| Technology | Si |
| Id - Continuous Drain Current | 1.5 A |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Typical Turn-Off Delay Time | 6.8 ns, 14.5 ns |
| Typical Turn-On Delay Time | 4.1 ns, 6.7 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
