Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 30 S |
| Rds On - Drain-Source Resistance | 6.5 mOhms |
| Rise Time | 46 ns |
| Fall Time | 8 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 69 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TSDSON-8 |
| Length | 3.3 mm |
| Width | 3.3 mm |
| Height | 1.1 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | BSZ086P03 |
| Packaging | Cut Tape or Reel |
| Part # Aliases | BSZ086P03NS3E BSZ86P3NS3EGXT G SP000473016 |
| Brand | Infineon Technologies |
| Configuration | Single |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Vgs - Gate-Source Voltage | 25 V |
| Vgs Th - Gate-Source Threshold Voltage | 3.1 V |
| Qg - Gate Charge | 57.5 nC |
| Technology | Si |
| Id - Continuous Drain Current | 40 A |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Typical Turn-Off Delay Time | 35 ns |
| Typical Turn-On Delay Time | 16 ns |
| Factory Pack Quantity | 5000 |
| Subcategory | MOSFETs |
